 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| NPN Silicon Darlington Transistors BCP 29 BCP 49 For general AF applications q High collector current q High current gain q Complementary types: BCP 28/48 (PNP) q Type BCP 29 BCP 49 Marking BCP 29 BCP 49 Ordering Code (tape and reel) Q62702-C2136 Q62702-C2137 Pin Configuration Package1) SOT-223 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TS = 124 C2) Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point 1) 2) Symbol VCE0 VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg Values BCP 49 BCP 29 30 40 10 60 80 10 500 800 100 200 1.5 150 - 65 ... + 150 Unit V mA W C Rth JA Rth JS 75 17 K/W For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 BCP 29 BCP 49 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 BCP 29 BCP 49 Collector-base breakdown voltage IC = 100 A, IB = 0 BCP 29 BCP 49 Emitter-base breakdown voltage IE = 10 A, IC = 0 Collector-base cutoff current VCB = 30 V, IE = 0 VCB = 60 V, IE = 0 VCB = 30 V, IE = 0, TA = 150 C VCB = 60 V, IE = 0, TA = 150 C Emitter-base cutoff current VEB = 4 V, IC = 0 DC current gain1) IC = 100 A, VCE = 1 V IC = 10 mA, VCE = 5 V IC = 100 mA, VCE = 5 V IC = 500 mA, VCE = 5 V Collector-emitter saturation voltage IC = 100 mA, IB = 0.1 mA Base-emitter saturation voltage IC = 100 mA, IB = 0.1 mA BCP 29 BCP 49 BCP 29 BCP 49 BCP 29 BCP 49 BCP 29 BCP 49 VCEsat VBEsat BCP 29 BCP 49 BCP 29 BCP 49 IEB0 hFE 4000 2000 10000 4000 20000 10000 4000 2000 - - - - - - - - - - - - - - - - - - - - 1.0 1.5 V V(BR)EB0 ICB0 - - - - - - - - - - 100 100 10 10 100 nA nA A A Values typ. max. Unit V(BR)CE0 30 60 V(BR)CB0 40 80 10 - - - - - - - - - - V nA - 1) Pulse test conditions: t 300 s, D = 2 %. Semiconductor Group 2 BCP 29 BCP 49 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. AC characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 100 MHz Output capacitance VCB = 10 V, f = 1 MHz fT Cobo - - 200 6.5 - - MHz pF Values typ. max. Unit Semiconductor Group 3 BCP 29 BCP 49 Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy Collector cutoff current ICB0 = f (TA) VCB = VCE max Transition frequency fT = f (IC) VCE = 5 V Permissible pulse load Ptot max/Ptot DC = f (tp) Semiconductor Group 4 BCP 29 BCP 49 DC current gain hFE = f (IC) VCE = 10 V Collector-emitter saturation voltage IC = f (VCEsat) hFE = 1000 Collector-base capacitance CCB0 = f (VCB0) Emitter-base capacitance CEB0 = f (VEB0) Base-emitter saturation voltage IC = f (VBEsat) hFE = 1000 Semiconductor Group 5 |
Price & Availability of BCP49
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |